RDS(on) = 1.65 Ω (Typ. ) @ VGS = 10 V, ID = 1.5 A
UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to.
Low Gate Charge (Typ. 11 nC).
Low Crss (Typ. 5 pF).
100% Avalanche Tested
provide better switching performance and higher avalanche energy strength. UniFET Ultra.
Full PDF Text Transcription for FDD5N50U (Reference)
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500 V, 3 A, 2.0 Ω Description Features • RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to • Low Gate Charge (Typ. 11 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while • RoHS Compliant Applications • LCD/LED/PDP TV norma
FDD5N50U Datasheet
